Evaluation of grain boundary trap states in polycrystalline–silicon thin-film transistors by mobility and capacitance measurements
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1454202
Reference26 articles.
1. The electrical properties of polycrystalline silicon films
2. Transport properties of polycrystalline silicon films
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5. A model of electrical conduction in polycrystalline silicon
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