Investigation of noise sources in platinum silicide Schottky barrier diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1454208
Reference16 articles.
1. A self-aligned CoSi2interconnection and contact technology for VLSI applications
2. PtSi contact metallurgy formed by three‐temperature annealing sequences and short annealing time
3. Effect of conventional and rapid thermal annealing on platinum silicide Schottky barrier diodes
4. Morphology of platinum silicide films prepared by conventional and rapid thermal annealing and deep levels induced in silicon
5. Extraction of Schottky diode (and p−n junction) parameters from I–V characteristics
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