Measured cross sections and ion energies for a CHF3 discharge
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1491276
Reference23 articles.
1. Control of relative etch rates of SiO2 and Si in plasma etching
2. Selective etching of SiO2 over polycrystalline silicon using CHF3 in an inductively coupled plasma reactor
3. Fluorocarbon high‐density plasmas. I. Fluorocarbon film deposition and etching using CF4 and CHF3
4. Fluorocarbon high‐density plasmas. II. Silicon dioxide and silicon etching using CF4 and CHF3
5. Reactive ion etching of silica structures for integrated optics applications
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