Current‐voltage characteristics of AlxGa1−xAs Schottky barriers andp‐njunctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.329423
Reference12 articles.
1. The Theory ofp-nJunctions in Semiconductors andp-nJunction Transistors
2. Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics
3. The effect of surface recombination on current in AlxGa1−xAs heterojunctions
4. Experimental Study of Gold‐Gallium Arsenide Schottky Barriers
5. Forward Voltage—Current Characteristics of Metal—Silicon Schottky Barriers
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1. A flux-based study of carrier transport in thin-base diodes and transistors;IEEE Transactions on Electron Devices;1995
2. Fabrication and characteristics of Al/sub x/Ga/sub 1-x/As heterojunction phototransistors with wide-gap window;IEEE Transactions on Electron Devices;1991-06
3. Transport theory of the double heterojunction bipolar transistor based on current balancing concept;Journal of Applied Physics;1986-03
4. Direct measurement of the potential spike energy in AlGaAs/GaAs single-heterojunction bipolar transistors;IEEE Electron Device Letters;1985-08
5. Current transport across the emitter‐base potential spike in AlGaAs/GaAs heterojunction bipolar transistors;Journal of Applied Physics;1985-07-15
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