Transport theory of the double heterojunction bipolar transistor based on current balancing concept
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336432
Reference15 articles.
1. Heterostructure bipolar transistors and integrated circuits
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1. $\hbox{In}_{0.46}\hbox{Ga}_{0.54}\hbox{P}_{0.98} \hbox{Sb}_{0.02}/\hbox{GaAs}$: Its Band Offset and Application to Heterojunction Bipolar Transistor;IEEE Electron Device Letters;2010-05
2. Narrow Band Gap Semiconductors;Wiley Encyclopedia of Electrical and Electronics Engineering;2007-04-16
3. An analytical study of current-voltage characteristics and breakdown performance of GaInP∕GaAs composite collector double heterojunction bipolar transistor;Journal of Applied Physics;2004-10-15
4. Modeling of 1/f noise in heterostructure bipolar devices;SPIE Proceedings;2004-05-25
5. Characterization of InP/InGaAs double-heterojunction bipolar transistors with tunnelling barriers and composite collector structures;Semiconductor Science and Technology;2001-12-19
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