Modified metal-induced lateral crystallization using amorphous Ge∕Si layered structure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1780595
Reference11 articles.
1. Solid-phase crystallization of amorphous SiGe films deposited by LPCVD on SiO2 and glass
2. Solid-phase crystallization of Si1−xGex alloy layers
3. Al-Induced Crystallization of an Amorphous Si Thin Film in a Polycrystalline Al/Native SiO2/Amorphous Si Structure
4. Pd induced lateral crystallization of amorphous Si thin films
5. Fractal formation in a‐Si:H/Ag/a‐Si:H films after annealing
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1. Indentation-induced low-temperature solid-phase crystallization of Si1−xGex (x=0–1) on insulator;Applied Physics Letters;2009-05-11
2. Position-Controlled Growth of SiGe Crystal Grains on Insulator by Indentation-Induced Solid-Phase Crystallization;Japanese Journal of Applied Physics;2009-03-23
3. Low-temperature solid-phase crystallization of amorphous SiGe films on glass by imprint technique;Solid-State Electronics;2008-08
4. Electric field assisted low-temperature growth of SiGe on insulating films for future TFT;SPIE Proceedings;2008-02-29
5. Ni-imprint induced solid-phase crystallization in Si1−xGex (x: 0–1) on insulator;Applied Physics Letters;2007-07-23
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