Planar channeling in GaAs/InxGa1−xAs/GaAs strained‐layer structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342966
Reference7 articles.
1. Commensurate and incommensurate structures in molecular beam epitaxially grown GexSi1−xfilms on Si(100)
2. Axial channeling studies of strained-layer superlattices
3. Superlattice interface and lattice strain measurement by ion channeling
4. Planar dechanneling studies of strained-layer superlattice structures
5. Monte Carlo Channeling Calculations
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ion-beam characterization in superlattices;Handbook of Thin Films;2002
2. Analysis of strain in ultra-thin GaAs/In0.2Ga0.8As/GaAs single quantum well structures by channeling technique;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-09
3. Measurements of the random and channeled stopping powers for He ions in InP;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-07
4. Ion-channeling studies of InyGa1−yAs/GaAs strained-layer single and multiple quantum-well structures;Journal of Crystal Growth;1994-10
5. Interdiffusion and thermally induced strain relaxation in GaAs/In0.2Ga0.8As/GaAs single quantum well structures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-03
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