Ion-channeling studies of InyGa1−yAs/GaAs strained-layer single and multiple quantum-well structures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference31 articles.
1. Dependence of critical layer thickness on strain for InxGa1−xAs/GaAs strained‐layer superlattices
2. Elimination of dark line defects in lattice‐mismatched epilayers through use of strained‐layer superlattices
3. Critical layer thickness in In0.2Ga0.8As/GaAs single strained quantum well structures
4. Controversy of critical layer thickness for InGaAs/GaAs strained‐layer epitaxy
5. Variation of the critical layer thickness with In content in strained InxGa1−xAs‐GaAs quantum wells grown by molecular beam epitaxy
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. 2MeV-He ion channeling studies of MOVPE-grown GaInNAs single quantum wells;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-08
2. RBS/channeling studies of swift heavy ion irradiated InGaAs/GaAs heterostructures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-03
3. Ion-beam characterization in superlattices;Handbook of Thin Films;2002
4. Influence of interdiffusion processes on optical and structural properties of pseudomorphic In0.35Ga0.65As/GaAs multiple quantum well structures;Journal of Applied Physics;1996-05-01
5. Impurity free selective interdiffusion of pseudomorphic InyGa1−yAs/GaAs multiple quantum well laser and modulator structures;Materials Science and Technology;1995-08
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