2MeV-He ion channeling studies of MOVPE-grown GaInNAs single quantum wells-Reference-Cited by-同舟云学术

2MeV-He ion channeling studies of MOVPE-grown GaInNAs single quantum wells

Published:2006-08 Issue:1-2 Volume:249 Page:501-503
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Nebiki Takuya,Narusawa Tadashi,Kumagai Akiko,Saito Tadashi,Takagishi Shigenori

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference7 articles.

1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

2. S. Tanaka, M. Takahashi, A. Moto, T. Tanabe, S. Takagishi, K. Karatani, T. Nakanishi, M. Nakayama, Inst. Phys. Conf. Ser. No. 162, 1998, p. 633 (Chapter 11).

3. Ion-channeling studies of InyGa1−yAs/GaAs strained-layer single and multiple quantum-well structures

4. Characterization of strained InGaAs single quantum well structures by ion beam methods

5. Materials Analysis by Ion Channeling;Feldman,1982

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