Characterization of strained InGaAs single quantum well structures by ion beam methods
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102642
Reference14 articles.
1. High‐efficiency carrier collection and stimulated emission in thin (50 Å) pseudomorphic InxGa1−xAs quantum wells
2. Graded‐index separate‐confinement InGaAs/GaAs strained‐layer quantum well laser grown by metalorganic chemical vapor deposition
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. 2MeV-He ion channeling studies of MOVPE-grown GaInNAs single quantum wells;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-08
2. Studies of Ultrathin InGaAs Quantum Wells Grown at Different Temperatures by Magneto-Photoluminescence;Japanese Journal of Applied Physics;2005-02-08
3. Analysis of strain in ultra-thin GaAs/In0.2Ga0.8As/GaAs single quantum well structures by channeling technique;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-09
4. Interdiffusion and thermally induced strain relaxation in GaAs/In0.2Ga0.8As/GaAs single quantum well structures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-03
5. Raman scattering in InxGa1−xAs/GaAs superlattices grown by molecular beam epitaxy;Materials Science and Engineering: B;1993-06
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