Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions-Reference-Cited by-同舟云学术

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Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

Published:2016-09-19 Issue:12 Volume:109 Page:121102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang Yuewei¹^ORCID,Krishnamoorthy Sriram¹,Akyol Fatih¹,Allerman Andrew A.²,Moseley Michael W.²,Armstrong Andrew M.²,Rajan Siddharth¹³

Affiliation:

1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA

2. Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

3. Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA

Funder

National Science Foundation (NSF)

Sandia National Laboratories (Sandia)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4962900

Reference35 articles.

1. M. Kneissl and J. Rass , III-Nitride Ultraviolet Emitters ( Springer International Publishing, Switzerland, 2016).

2. AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%

3. 270 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60 mW Continuous Wave Output Power

4. Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

5. High power AlGaN ultraviolet light emitters

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4. Recent Progress in III‐Nitride Tunnel Junction Light‐Emitting Diodes;physica status solidi (RRL) – Rapid Research Letters;2024-02-03

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