Selective etching of Si relative to SiO2without undercutting by CBrF3plasma
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91651
Reference7 articles.
1. Plasma etching in integrated circuit manufacture—A review
2. Preferential SiO2Etching on Si Substrate by Plasma Reactive Sputter Etching
3. Etching Characteristics of Various Materials by Plasma Reactive Sputter Etching
4. Ion‐surface interactions in plasma etching
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3. Plasma cryogenic etching of silicon: from the early days to today's advanced technologies;Journal of Physics D: Applied Physics;2014-03-06
4. Anisotropic Etching of Si and WSiN Using ECR Plasma of SF6–CF4Gas Mixture;Japanese Journal of Applied Physics;2000-06-15
5. Pattern profile control of polysilicon in magnetron reactive ion etching;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-03
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