About the nature of the barrier inhomogeneities at Au/Ti/n-InAlAs(001) Schottky contacts
Author:
Affiliation:
1. Rzhanov Institute of Semiconductor Physics, SBRAS, 13 Lavrentiev Ave., Novosibirsk 630090, Russian Federation
2. Novosibirsk State University Higher College of Informatics, 2 Pirogov Str., Novosibirsk 630090, Russian Federation
Funder
Russian Foundation for Basic Research
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5091598
Reference24 articles.
1. Recent advances in Schottky barrier concepts
2. High-performance double-recessed enhancement-mode metamorphic HEMTs on 4-in GaAs substrates
3. Enhancement of $f_{\mathrm {max}}$ to 910 GHz by Adopting Asymmetric Gate Recess and Double-Side-Doped Structure in 75-nm-Gate InAlAs/InGaAs HEMTs
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