Memristor property of an amorphous Sn–Ga–O thin-film device deposited using mist chemical-vapor-deposition method-Reference-Cited by-同舟云学术

Memristor property of an amorphous Sn–Ga–O thin-film device deposited using mist chemical-vapor-deposition method

Author:

Takishita Yuta¹²^ORCID,Kobayashi Masaki¹,Hattori Kazuki¹,Matsuda Tokiyoshi³,Sugisaki Sumio¹,Nakashima Yasuhiko²^ORCID,Kimura Mutsumi¹²^ORCID

Affiliation:

1. Faculty of Science and Technology, Ryukoku University, Otsu, Shiga 520-2194, Japan

2. Division of Information Science, NAIST (Nara Institute of Science and Technology), Ikoma, Nara 630-0192, Japan

3. High-Tech Research Center, Ryukoku University, Otsu, Shiga 520-2194, Japan

Funder

Research Grants in the Natural Sciences from the Mitsubishi Foundation

Laboratory for Material and Structures at Tokyo Institute of Technology

Research Institute of Electrical Communication, Tohoku University

Support Center for Advanced Telecommunications Technology Research Foundation

Yazaki Memorial Foundation for Science and Technology

Grant-in-Aid for Scientific Research

Telecommunications Advancement Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

Reference19 articles.

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