Spike-Timing-Dependent Plasticity Device with Ga-Sn-O Conductance Change Layer Deposited by Mist-CVD Method-Reference-Cited by-同舟云学术

Spike-Timing-Dependent Plasticity Device with Ga-Sn-O Conductance Change Layer Deposited by Mist-CVD Method

Published:2024-08-28 Issue:17 Volume:13 Page:3413
ISSN:2079-9292
Container-title:Electronics
language:en
Short-container-title:Electronics

Author:

Kita Hidehito¹,Uno Kazuma²,Matsuda Tokiyoshi³⁴,Kawanishi Hidenori⁴⁵,Kimura Mutsumi¹²⁵^ORCID

Affiliation:

1. Graduate School of Advanced Science and Technology, Ryukoku University, Otsu 520-2194, Seta, Japan

2. Faculty of Advanced Science and Technology, Ryukoku University, Otsu 520-2194, Seta, Japan

3. Graduate School of Science and Engineering, Kindai University, Higashiosaka 577-8502, Osaka, Japan

4. Innovative Materials and Processing Research Center, Ryukoku University, Otsu 520-2194, Seta, Japan

5. Graduate School of Science and Technology, Nara Institute of Science and Technology (NAIST), Ikoma 630-0192, Nara, Japan

Abstract

A spike-timing-dependent plasticity (STDP) device with a Ga-Sn-O (GTO) conductance change layer deposited by a mist-CVD method has been developed. First, the memristive characteristic is analyzed. Next, based on it, spike waveforms are determined. Finally, the STDP characteristic is successfully confirmed. This is an original report on the realization of an STDP characteristic using a thin film deposited by the mist-CVD method, which is achieved by the GTO properties and a well-designed clear methodology to realize a STDP characteristic from a memristive characteristic.

Funder

JSPS KAKENHI

JST Taiwan

ALCA-Next

High-Tech Research Center in Ryukoku University

Laboratory for Materials and Structures in Tokyo Institute of Technology

Research Institute of Electrical Communication in Tohoku University

Publisher

MDPI AG

Link

https://www.mdpi.com/2079-9292/13/17/3413/pdf

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