High aspect ratio hole filling by tungsten chemical vapor deposition combined with a silicon sidewall and barrier metal for multilevel interconnection-Reference-Cited by-同舟云学术

High aspect ratio hole filling by tungsten chemical vapor deposition combined with a silicon sidewall and barrier metal for multilevel interconnection

Published:1987-08-15 Issue:4 Volume:62 Page:1265-1273
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Suguro K.,Nakasaki Y.,Shima S.,Yoshii T.,Moriya T.,Tango H.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.339679

Reference12 articles.

1. Oxide barriers to the formation of refractory silicides

2. Direct measurements of interfacial contact resistance, end contact resistance, and interfacial contact layer uniformity

3. Interfacial reactions between aluminum and transition‐metal nitride and carbide films

4. Applications of TiN thin films in silicon device technology

5. TiN formed by evaporation as a diffusion barrier between Al and Si

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