Impact of the defects on the electrical and optical properties of AlGaN ultraviolet photodetectors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1481211
Reference28 articles.
1. Emerging gallium nitride based devices
2. GaN/AIGaN Heterostructure Devices: Photodetectors and Field-Effect Transistors
3. AlxGa1−xN (0⩽x⩽1) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition
4. Semiconductor ultraviolet detectors
5. Photoconductor gain mechanisms in GaN ultraviolet detectors
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