Well-width dependence of the ground level emission of GaN/AlGaN quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.372175
Reference17 articles.
1. Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect
2. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
3. Piezoelectric effects on electrical and optical properties of wurtzite GaN/AlGaN quantum well lasers
4. Reduction of oscillator strength due to piezoelectric fields inGaN/AlxGa1−xNquantum wells
5. Strain and charge distribution in GaN‐AlN‐GaN semiconductor‐insulator‐semiconductor structure for arbitrary growth orientation
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1. A delta barrier in a well and the exact time evolution of its eigenstates;Journal of Applied Physics;2023-05-02
2. Study on higher-energy emission observed locally around V-pits on InGaN/GaN quantum wells grown on moderate-temperature GaN;Journal of Applied Physics;2021-08-07
3. Strain-Induced Spectral Red-Shifting from Nanoscale Frustum Arrays Fabricated over InGaN/GaN Quantum Wells for Light-Emitting Applications;ACS Applied Nano Materials;2020-12-29
4. Design of AlGaN-based quantum structures for low threshold UVC lasers;Journal of Applied Physics;2019-12-14
5. The polarization field in Al-rich AlGaN multiple quantum wells;Japanese Journal of Applied Physics;2019-05-09
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