Effects of a thin InGaAs layer on carrier dynamics of InAs quantum dots
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3506709
Reference21 articles.
1. Gain and the threshold of three-dimensional quantum-box lasers
2. Multidimensional quantum well laser and temperature dependence of its threshold current
3. High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents
4. The role of Auger recombination in the temperature-dependent output characteristics (T0=∞) of p-doped 1.3 μm quantum dot lasers
5. Temperature-dependent modulation characteristics for 1.3 μm InAs/GaAs quantum dot lasers
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