Electric field-induced coexistence of nonvolatile resistive and magnetization switching in Pt/NiO/Nb:SrTiO3 heterostructure-Reference-Cited by-同舟云学术

Electric field-induced coexistence of nonvolatile resistive and magnetization switching in Pt/NiO/Nb:SrTiO3 heterostructure

Published:2016-07-04 Issue:1 Volume:109 Page:013504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhao Meng¹,Zhu Yongdan¹²,Wang Qiangwen¹,Wei Maocai¹,Liu Xiaolian³,Zhang Feng¹,Hu Cheng²,Zhang Tingting²,Qiu Da²,Li Meiya¹,Xiong Rui¹^ORCID

Affiliation:

1. School of Physics and Technology and Key Laboratory of Artificial Micro/Nano Structures of the Ministry of Education, Wuhan University, Wuhan 430072, People's Republic of China

2. Science and Technology College, Hubei University for Nationalities, Enshi 445000, Hubei, People's Republic of China

3. School of Electrical Engineering and Automation, Henan Polytechnique University, Jiaozuo, Henan, People's Republic of China

Funder

Excellent Young Innovation Team Project of Hubei Province

National Natural Science Foundation of China (NSFC)

Natural Science Foundation of Hubei Province (Hubei Provincial Natural Science Foundation)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4955466

Reference30 articles.

1. Who Wins the Nonvolatile Memory Race?

2. Direct observation of conducting filaments on resistive switching of NiO thin films

3. Effects of heat dissipation on unipolar resistance switching in Pt∕NiO∕Pt capacitors

4. Electric field manipulation of nonvolatile magnetization in Au/NiO/Pt heterostructure with resistive switching effect

5. Magnetism as a probe of the origin of memristive switching in p-type antiferromagnetic NiO

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