Diffuse x-ray rods and scattering from point defect clusters in ion implanted silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126447
Reference14 articles.
1. Ion beams in silicon processing and characterization
2. Implantation and transient boron diffusion: the role of the silicon self-interstitial
3. Studies of the interactions between (311) defects and type I and II dislocation loops in Si+ implanted silicon
4. Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena
5. Modeling Silicon Implantation Damage and Transient Enhanced Diffusion Effects for Silicon Technology Development
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