Analysis of solid phase crystallization in amorphized polycrystalline Si films on quartz substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343965
Reference12 articles.
1. Polycrystalline Si thin‐film transistors fabricated at ≤800 °C: Effects of grain size and {110} fiber texture
2. A Super Thin Film Transistor in Advanced Poly Si Films
3. Characteristics of MOSFETs on large-grain polysilicon films
4. Amorphous‐Si/crystalline‐Si facet formation during Si solid‐phase epitaxy near Si/SiO2 boundary
5. Lateral solid phase epitaxy of amorphous Si films on Si substrates with SiO2patterns
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