Amorphous‐Si/crystalline‐Si facet formation during Si solid‐phase epitaxy near Si/SiO2 boundary
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.333958
Reference10 articles.
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4. Phänomenologische Theorie der Kristallabscheidung an Oberflächen. I
5. Epitaxial regrowth of intrinsic,31P‐doped and compensated (31P+11B‐doped) amorphous Si
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