Growth and characterization of lattice‐matched CaxSr1−xF2on GaAs(100)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339692
Reference20 articles.
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4. CaF2/Si(111): Thin-film characterization by high-resolution electron-energy-loss spectroscopy
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1. MBE growth of fluorides;Microelectronics Journal;1996-07
2. Initial stages of the growth ofSrF2on InP;Physical Review B;1995-11-15
3. Improvement of the interface properties of Ca0.43Se0.57F2on GaAs(100) by rapid thermal annealing;Semiconductor Science and Technology;1995-05-01
4. Internal photoemission spectroscopy of semiconductor-insulator interfaces;Progress in Surface Science;1992-10
5. Epitaxial growth of alkaline earth fluoride films on HF‐treated Si and (NH4)2Sx‐treated GaAs withoutinsitucleaning;Applied Physics Letters;1992-01-13
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