Heteroepitaxy of semiconductor‐on‐insulator structures: Si and Ge on CaF2/Si(111)

Author:

Fathauer R. W.,Lewis N.,Hall E. L.,Schowalter L. J.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 36 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Monolithic integration of rare-earth oxides and semiconductors for on-silicon technology;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2014-07

2. Epitaxial phase-change materials;physica status solidi (RRL) - Rapid Research Letters;2012-10-22

3. Rare-earth-metal oxide buffer for epitaxial growth of single crystal GeSi and Ge on Si(111);Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-03

4. Surfactant enhanced solid phase epitaxy of Ge/CaF2/Si(111): Synchrotron x-ray characterization of structure and morphology;Journal of Applied Physics;2011-11-15

5. A novel engineered oxide buffer approach for fully lattice-matched SOI heterostructures;New Journal of Physics;2010-09-06

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