Measurement of ultrafast dynamics of photoexcited carriers inβ-Ga2O3by two-color optical pump-probe spectroscopy
Author:
Affiliation:
1. School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA
2. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
Funder
National Science Foundation
Air Force Office of Scientific Research
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5058164
Reference35 articles.
1. Recent progress in Ga2O3power devices
2. Perspective—Opportunities and Future Directions for Ga2O3
3. A review of Ga2O3materials, processing, and devices
4. Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV
5. High gain Ga_2O_3 solar-blind photodetectors realized via a carrier multiplication process
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4. Ultra-wide single crystal nanobelts of β-Ga2O3 synthesized by carbothermal reduction;Applied Physics A;2023-02-11
5. Broadband ultrafast photogenerated carrier dynamics induced by intrinsic defects in <inline-formula><tex-math id="Z-20231102113631">\begin{document}$\boldsymbol\beta$\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="21-20231173_Z-20231102113631.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="21-20231173_Z-20231102113631.png"/></alternatives></inline-formula>-Ga<sub>2</sub>O<sub>3</sub>;Acta Physica Sinica;2023
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