The role of Ru passivation and doping on the barrier and seed layer properties of Ru-modified TaN for copper interconnects
Author:
Affiliation:
1. Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork T12 R5CP, Ireland
2. Department of Electrical Engineering and Automation, Aalto University, Espoo 02150, Finland
Funder
SFI-NSFC Partnership
Publisher
AIP Publishing
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0003852
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4. D. C. Edelstein, in Proceedings of the 2017 International Electron Devices Meeting (IEEE, 2017), pp. 14.1.1–14.1.4.
5. Electromigration challenges for advanced on-chip Cu interconnects
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