Control of the Cu morphology on Ru-passivated and Ru-doped TaN surfaces – promoting growth of 2D conducting copper for CMOS interconnects-Reference-Cited by-同舟云学术

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Control of the Cu morphology on Ru-passivated and Ru-doped TaN surfaces – promoting growth of 2D conducting copper for CMOS interconnects

Published:2022 Issue:3 Volume:13 Page:713-725
ISSN:2041-6520
Container-title:Chemical Science
language:en
Short-container-title:Chem. Sci.

Author:

Nies Cara-Lena¹,Natarajan Suresh Kondati²,Nolan Michael¹³^ORCID

Affiliation:

1. Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork, T12 R5CP, Ireland

2. Synopsys Denmark ApS, Fruebjergvej 3, 2100 Copenhagen, Denmark

3. NIBEC, School of Engineering, University of Ulster at Jordanstown, BT37 0QB, UK

Abstract

Modifying the surface layer of the barrier material TaN with Ru controls the morphology of deposited copper.

Funder

Science Foundation Ireland

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/SC/D1SC04708F

Reference62 articles.

1. M. T.Bohr , in Proc. Int. Electron Devices Meet. , IEEE , 1995 , pp. 241–244

2. The drive to miniaturization

3. Electromigration challenges for advanced on-chip Cu interconnects

4. First-Principles Simulations of Conditions of Enhanced Adhesion Between Copper and TaN(111) Surfaces Using a Variety of Metallic Glue Materials

5. Electroless Plating of Copper on Metal-Nitride Diffusion Barriers Initiated by Displacement Plating

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1. The surface chemistry of the atomic layer deposition of ruthenium on aluminum and tantalum oxide surfaces;Surface Science;2024-11

2. Size effect of PbTiO3 on its charge separation ability;Materials Today Communications;2023-08

3. Incorporation of tungsten or cobalt into TaN barrier layers controls morphology of deposited copper;Journal of Physics: Materials;2023-06-30

4. Adsorption and Surface Diffusion of Atomic Ru on TiN and SiO2: A First-Principles Study;Coatings;2023-05-31

5. On the Mechanism of the Atomic Layer Deposition of Cu Films on Silicon Oxide Surfaces: Activation Using Atomic Hydrogen and Three-Dimensional Growth;Chemistry of Materials;2023-03-03

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