Termination-dependence of Fermi level pinning at rare-earth arsenide/GaAs interfaces
Author:
Affiliation:
1. Department of Engineering, University of Cambridge, Cambridge CB2 1PZ, United Kingdom
2. College of Engineering, Swansea University, Swansea SA1 8EN, United Kingdom
Funder
Supercomputing Wales
Engineering and Physical Sciences Research Council
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0007479
Reference41 articles.
1. Electrical contacts to two-dimensional semiconductors
2. Statistical Study on the Schottky Barrier Reduction of Tunneling Contacts to CVD Synthesized MoS2
3. Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides
4. Schottky Barrier Height Engineering for Electrical Contacts of Multilayered MoS2 Transistors with Reduction of Metal-Induced Gap States
5. Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions
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