Performance and characteristics of double layer porous silicon oxide resistance random access memory-Reference-Cited by-同舟云学术

Performance and characteristics of double layer porous silicon oxide resistance random access memory

Published:2013-06-24 Issue:25 Volume:102 Page:253509
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tsai Tsung-Ming,Chang Kuan-Chang,Zhang Rui,Chang Ting-Chang,Lou J. C.,Chen Jung-Hui,Young Tai-Fa,Tseng Bae-Heng,Shih Chih-Cheng,Pan Yin-Chih,Chen Min-Chen,Pan Jhih-Hong,Syu Yong-En,Sze Simon M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4812474

Reference20 articles.

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