An array of dislocations in a strained epitaxial layer. II. Work hardening
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356256
Reference7 articles.
1. Strain relief in compositionally graded InAsxSb1−x buffer layers and InAsxSb1−x/InSb strained-layer superlattices grown by MOCVD
2. Work hardening and strain relaxation in strained‐layer buffers
3. Work hardening and strain relaxation in strained‐layer buffers
4. An array of dislocations in a strained epitaxial layer. I. Elastic energy
5. The energy of an array of dislocations: Implications for strain relaxation in semiconductor heterostructures
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1. The interaction between misfit dislocations at the metal/MgO interfaces: Atomistic study and analysis;Physica B: Condensed Matter;2012-03
2. Study of the relaxation process during InGaAs/GaAs (001) growth from in situ real-time stress measurements;Applied Physics Letters;2002-11-25
3. Elasticity Studies of the Critical Thickness of an Epilayer Deposited on a Substrate with Finite or Infinite Thickness;International Journal of Nonlinear Sciences and Numerical Simulation;2000-01
4. Criteria for formation of interface dislocations in a finite thickness epilayer deposited on a substrate;Journal of Applied Physics;1999-06
5. Effect of In-content on the misfit dislocation interaction in InGaAs/GaAs layers;Thin Solid Films;1999-04
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