Study of the relaxation process during InGaAs/GaAs (001) growth from in situ real-time stress measurements
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1524303
Reference14 articles.
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5. An array of dislocations in a strained epitaxial layer. II. Work hardening
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