Effects of isolation materials on facet formation for silicon selective epitaxial growth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120033
Reference19 articles.
1. Application of selective silicon epitaxial growth for CMOS technology
2. Raised source/drain MOSFET with dual sidewall spacers
3. The Fabrication of CMOS Structures with Increased Immunity to Latchup Using the Two‐Step Epitaxial Process
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2. Selective epitaxy growth of Si1−xGex layers for MOSFETs and FinFETs;Journal of Materials Science: Materials in Electronics;2015-05-31
3. Selective Growth of B- and C-Doped SiGe Layers in Unprocessed and Recessed Si Openings for p-type Metal-Oxide-Semiconductor Field-Effect Transistors Application;Journal of The Electrochemical Society;2010
4. Facet formation and lateral overgrowth of selective Ge epitaxy on SiO[sub 2]-patterned Si(001) substrates;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2008
5. Study of the defect elimination mechanisms in aspect ratio trapping Ge growth;Applied Physics Letters;2007-03-05
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