Study of the defect elimination mechanisms in aspect ratio trapping Ge growth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2711276
Reference10 articles.
1. High quality Ge on Si by epitaxial necking
2. Selective growth of Ge on Si(100) through vias of SiO2 nanotemplate using solid source molecular beam epitaxy
3. Defect reduction of selective Ge epitaxy in trenches on Si(001) substrates using aspect ratio trapping
4. T. A. Langdo, Ph.D thesis, MIT, 2001.
5. Epitaxial necking in GaAs grown on pre-pattemed Si substrates
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