A quantitative method for determination of carrier escape efficiency in GaN-based light-emitting diodes: A comparison of open- and short-circuit photoluminescence-Reference-Cited by-同舟云学术

A quantitative method for determination of carrier escape efficiency in GaN-based light-emitting diodes: A comparison of open- and short-circuit photoluminescence

Published:2014-03-03 Issue:9 Volume:104 Page:091104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lim Seung-Hyuk,Ko Young-Ho,Cho Yong-Hoon

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4867238

Reference15 articles.

1. Efficiency droop in light-emitting diodes: Challenges and countermeasures

2. Efficiency droop in nitride-based light-emitting diodes

3. Electrically Driven Quantum Dot/Wire/Well Hybrid Light-Emitting Diodes

4. Direct comparison of optical characteristics of InGaN-based laser diode structures grown on pendeo epitaxial GaN and sapphire substrates

5. Auger recombination in InGaN measured by photoluminescence

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