Direct comparison of optical characteristics of InGaN-based laser diode structures grown on pendeo epitaxial GaN and sapphire substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2716313
Reference12 articles.
1. Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates
2. Increase of free carrier lifetime in nonpolar a-plane GaN grown by epitaxial lateral overgrowth
3. Electrical characteristics of InGaN∕GaN light-emitting diodes grown on GaN and sapphire substrates
4. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
5. Characteristics of GaN-based laser diodes for post-DVD applications
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