GaN/InGaN LED Sidewall Defects Analysis by Cathodoluminescence and Photosensitive Kelvin Probe Force Microscopy-Reference-Cited by-同舟云学术

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GaN/InGaN LED Sidewall Defects Analysis by Cathodoluminescence and Photosensitive Kelvin Probe Force Microscopy

Published:2024-04-20 Issue:5 Volume:11 Page:2097-2104
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

González-Izquierdo Palmerina¹^ORCID,Rochat Névine¹,Sakowski Konrad²³^ORCID,Zoccarato Davide¹,Charles Matthew¹,Borowik Łukasz¹

Affiliation:

1. Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France

2. Institute of Applied Mathematics and Mechanics, University of Warsaw, Banacha 2, 02-097 Warsaw, Poland

3. Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland

Funder

Agence Nationale de la Recherche

Important Project of Common European Interest

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.4c00384

Reference32 articles.

1. Ultra-low-power sub-photon-voltage high-efficiency light-emitting diodes

2. A single-pixel wireless contact lens display

3. Mini-LED and Micro-LED: Promising Candidates for the Next Generation Display Technology

4. Injectable, Cellular-Scale Optoelectronics with Applications for Wireless Optogenetics

5. High-Density μLED-Based Optical Cochlear Implant With Improved Thermomechanical Behavior

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of crystallographic facet of InGaN micro-LED sidewalls on electro-optical characteristics;Journal of Applied Physics;2024-07-09

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