Slanted n-ZnO/p-GaN nanorod arrays light-emitting diodes grown by oblique-angle deposition
Author:
Publisher
AIP Publishing
Subject
General Engineering,General Materials Science
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4874455
Reference24 articles.
1. Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
2. High temperature excitonic stimulated emission from ZnO epitaxial layers
3. Zinc oxide nanostructures: growth, properties and applications
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5. Direct formation of InN-codoped p-ZnO/n-GaN heterojunction diode by solgel spin-coating scheme
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