Direct formation of InN-codoped p-ZnO/n-GaN heterojunction diode by solgel spin-coating scheme-Reference-Cited by-同舟云学术

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Direct formation of InN-codoped p-ZnO/n-GaN heterojunction diode by solgel spin-coating scheme

Published:2014-02-06 Issue:4 Volume:39 Page:805
ISSN:0146-9592
Container-title:Optics Letters
language:en
Short-container-title:Opt. Lett.

Author:

Huang Chun-Ying,Lee Ya-Ju,Lin Tai-Yuan,Chang Shao-Lun,Lian Jan-Tian,Lin Hsiu-Mei,Chen Nie-Chuan,Yang Ying-Jay

Funder

National Science Council Taiwan (NSC)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference24 articles.

1. p-Si nanowires/SiO2/n-ZnO heterojunction photodiodes

2. A reproducible route to p-ZnO films and their application in light-emitting devices

3. p-Type Electrical Conduction in ZnO Thin Films by Ga and N Codoping

4. Persistent n-type photoconductivity in p-type ZnO

5. Electrical transport properties in nitrogen-doped p-type ZnO thin film

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3. A self-powered ultraviolet photodiode using an amorphous InGaZnO/p-silicon nanowire heterojunction;Vacuum;2020-10

4. Trap-assisted photomultiplication in a-IGZO/p-Si heterojunction ultraviolet photodiodes;Smart Materials and Structures;2020-09-30

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