Excimer-laser-induced activation of Mg-doped GaN layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1695436
Reference19 articles.
1. Influence of oxygen on the activation of p-type GaN
2. Novel Methods of p-type Activation in Mg-doped GaN
3. Low-energy electron-beam irradiation and yellow luminescence in activated Mg-doped GaN
4. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
5. Acceptor activation of Mg-doped GaN by microwave treatment
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2. Effects of 532 nm laser-assisted annealing on metal contact to p-GaN;Materials Science in Semiconductor Processing;2022-03
3. Laser-induced activation of Mg-doped GaN: quantitative characterization and analysis;Journal of Physics D: Applied Physics;2022-02-07
4. Improving Optical and Electrical Properties of GaN Epitaxial Wafers and Enhancing Luminescent Properties of GaN-Based Light-Emitting-Diode with Excimer Laser Irradiation;Symmetry;2021-10-14
5. Electronic surface, optical and electrical properties of p – GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED;Materials Science in Semiconductor Processing;2020-02
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