Acceptor activation of Mg-doped GaN by microwave treatment-Reference-Cited by-同舟云学术

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Acceptor activation of Mg-doped GaN by microwave treatment

Published:2001-01-15 Issue:3 Volume:78 Page:312-313
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chang Shoou-Jinn,Su Yan-Kuin,Tsai Tzong-Liang,Chang Chung-Ying,Chiang Chih-Lih,Chang Chih-Sung,Chen Tzer-Peng,Huang Kuo-Hsin

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1340864

Reference6 articles.

1. Hydrogen passivation of Mg acceptors in GaN grown by metalorganic chemical vapor deposition

2. Hole Compensation Mechanism of P-Type GaN Films

3. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

4. Electron beam effects on blue luminescence of zinc-doped GaN

5. Thermal Annealing Effects on P-Type Mg-Doped GaN Films

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2. Electrochemical Potentiostatic Activation for the Improvement of 270 nm AlGaN-Based UV-C Light-Emitting Diodes;ECS Journal of Solid State Science and Technology;2022-02-01

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4. Implementation of the Taguchi method to optimize p-ohmic contact for InGaN/GaN LEDs;Microelectronic Engineering;2019-10

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