Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties-Reference-Cited by-同舟云学术

Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties

Published:2014-08-14 Issue:6 Volume:116 Page:063502
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Greenlee Jordan D.¹,Feigelson Boris N.²,Anderson Travis J.²,Tadjer Marko J.³,Hite Jennifer K.²,Mastro Michael A.²,Eddy Charles R.²,Hobart Karl D.²,Kub Francis J.²

Affiliation:

1. National Research Council, 500 Fifth St. NW, Washington, DC 20001, USA

2. Naval Research Laboratory, 4555 Overlook Ave SW, Washington, DC 20375, USA

3. American Society for Engineering Education, 1818 N St. NW, Washington, DC 20036, USA

Funder

Office of Naval Research (ONR)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4892618

Reference25 articles.

1. dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors

2. High-Power GaN Electronic Devices

3. Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation

4. High internal and external quantum efficiency InGaN/GaN solar cells

5. Enhancement-Mode GaN-Based High-Electron Mobility Transistors on the Si Substrate With a P-Type GaN Cap Layer

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