Temperature dependence of Mg-H local vibrational modes in heavily doped InN:Mg-Reference-Cited by-同舟云学术

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Temperature dependence of Mg-H local vibrational modes in heavily doped InN:Mg

Published:2012-09 Issue:5 Volume:112 Page:053528
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Cuscó Ramon,Domènech-Amador Núria,Artús Luis,Wang Ke,Yamaguchi Tomohiro,Nanishi Yasushi

Funder

Spanish Ministry of Science and Innovation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4749266

Reference29 articles.

1. Evidence forp-Type Doping of InN

2. Mg doped InN and confirmation of free holes in InN

3. Recent advances and challenges for successful p-type control of InN films with Mg acceptor doping by molecular beam epitaxy

4. Hydrogen in compound semiconductors

5. Local vibrational modes in Mg-doped GaN grown by molecular beam epitaxy

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Carbon doping of GaN: Proof of the formation of electrically active tri-carbon defects;Journal of Applied Physics;2020-05-29

2. Mg and In Codoped p-type AlN Nanowires for pn Junction Realization;Nano Letters;2019-11-14

3. Transition of dominant lattice sites of Mg in InN:Mg revealed by Raman scattering;Superlattices and Microstructures;2018-08

4. Phonon dynamics and anharmonicity in phase segregated structural domains of MgZnO film;Applied Physics Letters;2014-01-20

5. Functional Mn–Mgk cation complexes in GaN featured by Raman spectroscopy;Applied Physics Letters;2013-11-18

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