Mg and In Codoped p-type AlN Nanowires for pn Junction Realization-Reference-Cited by-同舟云学术

Mg and In Codoped p-type AlN Nanowires for pn Junction Realization

Published:2019-11-14 Issue:12 Volume:19 Page:8357-8364
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Siladie Alexandra-Madalina¹^ORCID,Jacopin Gwénolé²,Cros Ana³,Garro Nuria³,Robin Eric⁴,Caliste Damien⁵,Pochet Pascal⁵^ORCID,Donatini Fabrice²,Pernot Julien²^ORCID,Daudin Bruno¹

Affiliation:

1. IRIG-PHELIQS, NPSC, University Grenoble Alpes, CEA, 38000 Grenoble, France

2. Grenoble INP, Institut Néel, University Grenoble Alpes, CNRS, 38000 Grenoble, France

3. Institute of Materials Science, Universidad de Valencia, Valencia, Spain

4. IRIG-MEM, LEMMA, University Grenoble Alpes, CEA, F-38000 Grenoble, France

5. IRIG-MEM, L-SIM, University Grenoble Alpes, CEA, F-38000 Grenoble, France

Funder

Generalitat Valenciana

Agence Nationale de la Recherche

Ministerio de Ciencia e Innovaci?n

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.9b01394

Reference35 articles.

1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

2. Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency

3. The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)

4. Growth of Self-Organized GaN Nanostructures on $\bf Al_{2}O_{3}(0001)$ by RF-Radical Source Molecular Beam Epitaxy

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