Comparison of 4H-SiC impact ionization models using experiments and self-consistent simulations
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2958320
Reference14 articles.
1. Numerical and experimental characterization of 4H-silicon carbide lateral metal-oxide-semiconductor field-effect transistor
2. A quasi-two-dimensional depth-dependent mobility model suitable for device simulation for Coulombic scattering due to interface trapped charges
3. Quantum Modeling and Proposed Designs of CNT-Embedded Nanoscale MOSFETs
4. Ionization rates and critical fields in 4H silicon carbide
5. Nonlocal effects in thin 4H-SiC UV avalanche photodiodes
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1. Enhanced far ultraviolet spectral response and gain in SiC avalanche photodiodes;Applied Physics Letters;2021-05-31
2. Comparison of Impact Ionization Models for 4H-SiC Along the <0001> Direction, Through Breakdown Voltage Simulations at Room Temperature;IEEE Transactions on Electron Devices;2021-05
3. Predicting Cosmic Ray-Induced Failures in Silicon Carbide Power Devices;IEEE Transactions on Nuclear Science;2019-07
4. Thermo-optic Effect of 4H-silicon Carbide at Fiber-optic Communication Wavelengths;2019 PhotonIcs & Electromagnetics Research Symposium - Spring (PIERS-Spring);2019-06
5. Terrestrial Neutron-Induced Failures in Silicon Carbide Power MOSFETs and Diodes;IEEE Transactions on Nuclear Science;2018-06
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