Enhanced far ultraviolet spectral response and gain in SiC avalanche photodiodes-Reference-Cited by-同舟云学术

Enhanced far ultraviolet spectral response and gain in SiC avalanche photodiodes

Published:2021-05-31 Issue:22 Volume:118 Page:221102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sampath A. V.¹^ORCID,Chen Y.²,Llopis A.¹^ORCID,Shen H.¹,Smith J.¹,Kelley S.¹,Schuster J.¹^ORCID,Nouketcha F.¹^ORCID,Campbell J. C.²^ORCID,Wraback M.¹

Affiliation:

1. U.S. Army Combat Capabilities Development Command Army Research Laboratory, Sensors and Electron Devices Directorate, FCDD-RLS-ED, 2800 Powder Mill Road, Adelphi, Maryland 20783, USA

2. Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904, USA

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0050046

Reference25 articles.

1. Deep Ultraviolet Resonance Raman Excitation Enables Explosives Detection

2. Solar-blind AlGaN photodiodes with very low cutoff wavelength

3. Deep-ultraviolet Al0.75Ga0.25N photodiodes with low cutoff wavelength

4. AlGaN avalanche Schottky diodes with high Al-content

5. High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates

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4. Design and optimization of NUV-enhanced 4H-SiC separate-absorption-charge-multiplication avalanche photodiodes;Physics and Simulation of Optoelectronic Devices XXXI;2023-03-10