Initial stage for heteroepitaxy of 3C–SiC on the Si(001) surface in dimethylgermane source molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118569
Reference14 articles.
1. IVA-8 heteroepitaxial growth of cubic silicon carbide on foreign substrates
2. Interface Modification by Hydrocarbon Gas Molecular Beams in Heteroepitaxy of SiC on Si
3. Heteroepitaxial growth of single crystalline 3C‐SiC on Si substrates by gas source molecular beam epitaxy
4. Low‐temperature growth of 3C‐SiC by the gas source molecular beam epitaxial method
5. Cracking of Saturated Hydrocarbon Gas Molecular Beam for Carbonization of Si(001) Surface
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