Passivation of interface defects in lattice‐mismatched InGaAs/GaAs heterostructures with hydrogen
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343475
Reference9 articles.
1. Doping and transport studies in InxGa1−xAs/GaAs strained-layer superlattices
2. Optical characterization of pseudomorphic InxGa1−xAs–GaAs single‐quantum‐well heterostructures
3. Elimination of dark line defects in lattice‐mismatched epilayers through use of strained‐layer superlattices
4. Controversy of critical layer thickness for InGaAs/GaAs strained‐layer epitaxy
5. Observation of interface defects in strained InGaAs‐GaAs by photoluminescence spectroscopy
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