Investigation of negative photoconductivity in p-type Pb1-xSnxTe film-Reference-Cited by-同舟云学术

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Investigation of negative photoconductivity in p-type Pb1-xSnxTe film

Published:2017-01-23 Issue:4 Volume:110 Page:042102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tavares M. A. B.¹,da Silva M. J.¹,Peres M. L.¹^ORCID,de Castro S.²,Soares D. A. W.¹,Okazaki A. K.³,Fornari C. I.³^ORCID,Rappl P. H. O.³,Abramof E.³

Affiliation:

1. Instituto de Física e Química, Universidade Federal de Itajubá, Itajubá, MG CEP 37500-903, Brazil

2. Departamento de Física, Universidade Federal de São Carlos, São Carlos – SP 13565-905, Brazil

3. Laboratório Associado de Sensores e Materiais, Instituto Nacional de Pesquisas Espaciais, São José dos Campos, PB 515, SP CEP 12201-970, Brazil

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4974539

Reference23 articles.

1. Electrical properties of Pb1-xSnxTe layers with 0⩽x⩽1 grown by molecular beam epitaxy

2. Anomalous Band Gap Evolution from Band Inversion in Pb1−xSnxTe Nanocrystals

3. Spin-filtered edge states with an electrically tunable gap in a two-dimensional topological crystalline insulator

4. Band Structure and Laser Action inPbxSn1−xTe

5. Topological crystalline insulator states in Pb1−xSnxSe

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