Electrical properties of Pb1-xSnxTe layers with 0⩽x⩽1 grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366051
Reference21 articles.
1. Recent advances in lead-chalcogenide diode lasers
2. Lead salt quantum effect structures
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4. Low temperature growth of PbTe and of PbTe/Pb1−xEuxTe multi-quantum wells by molecular beam epitaxy
5. Progress in Compound‐Semiconductor‐on‐Silicon‐Heteroepitaxy with Fluoride Buffer Layers
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